Semiconductor Devices:Physics and Technology【台大九十週年校庆版】 pdf epub mobi txt 电子书 下载 2024

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Semiconductor Devices:Physics and Technology【台大九十週年校庆版】

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著者
出版者 出版社:国立台湾大学出版中心 订阅出版社新书快讯 新功能介绍
翻译者
出版日期 出版日期:2018/11/01
语言 语言:英文



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发表于2024-03-29

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Offering a basic introduction to physical principles of modern semiconductor devices and their advanced fabrication technology, this resource presents students with the theoretical and practical aspects of every step in device characterizations and fabrication, with an emphasis on integrated circuits. Divided into three parts, the text covers the basic properties of semiconductor materials, emphasizing silicon and gallium arsenide; the physics and characteristics of semiconductor devices; bipolar and unipolar special microwave and photonic devices; and the latest processing technologies, from crystal growth to lithographic pattern transfer.

著者信息

作者简介

S. M. Sze


  S. M. Sze is UMC Chair Professor of the National Chiao Tung University and President of the National Nano Device Laboratories, Taiwan, R.O.C. For many years he was a member of the technical staff at Bell Laboratories. Professor Sze is the co-inventor of nonvolatile semiconductor memory. He has written numerous texts on device physics, including PHYSICS OF SEMICONDUCTOR DEVICES, considered a reference classic. In 1991, he received the IEEE J. J. Ebers award for his “fundamental and pioneering contributions to semiconductor devices.” He received his PhD in solid-state electronic from Stanford University in 1963.
Semiconductor Devices:Physics and Technology【台大九十週年校庆版】 pdf epub mobi txt 电子书 下载

图书目录

「庆祝国立台湾大学创校九十週年选辑」总序╱王泰升
Preface
CHAPTER 1 Introduction
 1.1 Semiconductor Devices
 1.2 Semiconductor Technology
      Summary
 
PART I SEMICONDUCTOR PHYSICS
 
CHAPTER 2 Energy Bands and Carrier Concentration in Thermal Equilibrium
 2.1 Semiconductor Materials
 2.2 Basic Crystal Structure
 2.3 Basic Crystal Growth Technique
 2.4 Valence Bonds
 2.5 Energy Bands
 2.6 Intrinsic Carrier Concentration
 2.7 Donors and Acceptors
      Summary
CHAPTER 3 Carrier Transport Phenomena
 3.1 Carrier Drift
 3.2 Carrier Diffusion
 3.3 Generation and Recombination Processes
 3.4 Continuity Equation
 3.5 Thermionic Emission Process
 3.6 Tunneling Process
 3.7 High-Field Effects
      Summary
 
PART II SEMICONDUCTOR DEVICES
 
CHAPTER 4 p-n Junction
 4.1 Basic Fabrication Steps
 4.2 Thermal Equilibrium Condition
 4.3 Depletion Region
 4.4 Depletion Capacitance
 4.5 Current-Voltage Characteristics
 4.6 Charge Storage and Transient Behavior
 4.7 Junction Breakdown
 4.8 Heterojunction
      Summary
CHAPTER 5 Bipolar Transistor and Related Devices
 5.1 The Transistor Action
 5.2 Static Characteristics of Bipolar Transistor
 5.3 Frequency Response and Switching of Bipolar Transistor
 5.4 The Heterojunction Bipolar Transistor
 5.5 The Thyristor and Related Power Devices
      Summary
CHAPTER 6 MOSFET and Related Devices
 6.1 The MOS Diode
 6.2 MOSFET Fundamentals
 6.3 MOSFET Scaling
 6.4 CMOS and BiCMOS
 6.5 MOSFET on Insulator
 6.6 MOS Memory Structures
 6.7 The Power MOSFET
      Summary
CHAPTER 7 MESFET and Related Devices
 7.1 Metal-Semiconductor Contacts
 7.2 MESFET
 7.3 MODFET
      Summary
CHAPTER 8 Microwave Diodes, Quantum-Effect, and Hot-Electron Devices
 8.1 Basic Microwave Technology
 8.2 Tunnel Diode
 8.3 IMPATT Diode
 8.4 Transferred-Electron Devices
 8.5 Quantum-Effect Devices
 8.6 Hot-Electron Devices
      Summary
CHAPTER 9 Photonic Devices
 9.1 Radiative Transitions and Optical Absorption
 9.2 Light-Emitting Diodes
 9.3 Semiconductor Laser
 9.4 Photodetector
 9.5 Solar Cell
      Summary
 
PART III SEMICONDUCTOR TECHNOLOGY
 
CHAPTER 10 Crystal Growth and Epitaxy
 10.1 Silicon Crystal Growth from the Melt
 10.2 Silicon Float-Zone Process
 10.3 GaAs Crystal-Growth Techniques
 10.4 Material Characterization
 10.5 Epitaxial-Growth Techniques
 10.6 Structures and Defects in Epitaxial Layers
        Summary
CHAPTER 11 Film Formation
 11.1 Thermal Oxidation
 11.2 Dielectric Deposition
 11.3 Polysilicon Deposition
 11.4 Metallization
        Summary
CHAPTER 12 Lithography and Etching
 12.1 Optical Lithography
 12.2 Next-Generation Lithographic Methods
 12.3 Wet Chemical Etching
 12.4 Dry Etching 431
 12.5 Microelectromechanical Systems 443
        Summary
CHAPTER 13 Impurity Doping
 13.1 Basic Diffusion Process
 13.2 Extrinsic Diffusion
 13.3 Diffusion-Related Processes
 13.4 Range of Implanted Ions
 13.5 Implant Damage and Annealing
 13.6 Implantation-Related Processes
        Summary
CHAPTER 14 Integrated Devices
 14.1 Passive Components
 14.2 Bipolar Technology
 14.3 MOSFET Technology
 14.4 MESFET Technology
 14.5 Challenges for Microelectronics
        Summary
 
APPENDIX A List of Symbols
APPENDIX B International Systems of Units (SI Units)
APPENDIX C Unit Prefixes
APPENDIX D Greek Alphabet
APPENDIX E Physical Constants
APPENDIX F Properties of Important Element and Binary Compound Semiconductors at 300 K
APPENDIX G Properties of Si and GaAs at 300 K
APPENDIX H Derivation of the Density of States in a Semiconductor
APPENDIX I Derivation of Recombination Rate for Indirect Recombination
APPENDIX J Calculation of the Transmission Coefficient for a Symmetric Resonant-Tunneling Diode
APPENDIX K Basic Kinetic Theory of Gases
APPENDIX L Answers to Selected Problems
Index
 

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Semiconductor Devices:Physics and Technology【台大九十週年校庆版】 epub 下载 mobi 下载 pdf 下载 txt 电子书 下载 2024


Semiconductor Devices:Physics and Technology【台大九十週年校庆版】 epub 下载 mobi 下载 pdf 下载 txt 电子书 下载 2024

Semiconductor Devices:Physics and Technology【台大九十週年校庆版】 pdf epub mobi txt 电子书 下载 2024




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